• 姓名: 程寒松
  • 职称: 教授
  • 学位: 博士
  • 中国地质大学
  • 材料与化学学院
教育背景

1982年毕业于武汉大学化学系;

1982年考入吉林大学理论化学研究所研究生,师从我国著名量子化学家唐敖庆教授,1985年获硕士学位;

随后赴美留学,1991年获普林斯顿大学博士学位。

工作经历

毕业后即在美国Air Products&Chemicals(气体与化学品公司)工作,任高级研究员职位。

2004年参与创建美国能源部氢吸附材料研究中心(由九所美国大学、五个国家实验室和一家跨国公司组成)。

2004年被聘为中国地质大学(武汉)特聘教授。

2009年入选中组部第二批“***计划”学者。

学术兼职
中国地质大学学术委员会委员,“***计划”联谊会能源与资源专业委员会委员,《硅酸盐学报》杂志编委会编委,湖北省欧美同学会常务理事,湖北省高级专家协会会员,武汉大学、南京大学兼职教授。
科研项目

1,《多元稠杂环低共熔液态储氢材料及其氢化/脱氢催化剂的理论设计、制备及反应机理研究》,国家自然科学基金重点项目,项目经费280万元,2013.1-2017.12,主持;

2,《Computational Screening of Sillicon Nitride Precursors for Low Temperature Deposition》,国际合作项目,项目经费300万元, 2005.9-2012.12,主持 (项目编号201-828-P);

3,国家***人才--***计划启动经费,项目经费1000万,主持。

论文专著

在国内外知名学术刊物中公开发表学术论文达140余篇,在国际顶尖学术刊物中发表论文10余篇。

发表论文:

1. Huang, L.; Han, B.; Han, B.; Derecskei-Kovacs, A.; Xiao, M.; Lei, X.; O’Neill, M. L.; Pearlstein, R. M.; Chandra, H.; Cheng, H., First-Principles Study of a Full Cycle of Atomic Layer Deposition of SiO2 Thin Films with Di(sec-butylamino)silane and Ozone. The Journal of Physical Chemistry C 2013, 117 (38), 19454-19463.

2. Hu, Z. B.; Zhou, C. G.; Prabhakar, R. R.; Lim, S. X.; Wang, Y. H.; van Kan, J. A.; Cheng, H. S.; Mhaisalkar, S. G.; Sow, C. H., Rapid reversible electromigration of intercalated K ions within individual MoO3 nanobundle. Journal of Applied Physics 2013, 113 (2).

3. Han, B.; Sun, Y. B.; Fan, M. H.; Cheng, H. S., On the CO2 Capture in Water-Free Monoethanolamine Solution: An ab Initio Molecular Dynamics Study. Journal of Physical Chemistry B 2013, 117 (19), 5971-5977.

4. Zhang, Q.; Han, B.; Tang, X.; Heier, K.; Li, J. X.; Hoffman, J.; Lin, M.; Britton, S. L.; Derecskei-Kovacs, A.; Cheng, H., On the Mechanisms of Carbon Formation Reaction on Ni(111) Surface. The Journal of Physical Chemistry C 2012, 116 (31), 16522-16531.

5. Yang, M.; Han, C. Q.; Ni, G.; Wu, J. P.; Cheng, H. S., Temperature controlled three-stage catalytic dehydrogenation and cycle performance of perhydro-9-ethylcarbazole. International Journal of Hydrogen Energy 2012, 37 (17), 12839-12845.

6. Yang, M.; Han, B.; Cheng, H., First-Principles Study of Hydrogenation of Ethylene on a HxMoO3(010) Surface. The Journal of Physical Chemistry C 2012, 116 (46), 24630-24638.

7. Hu, Z. B.; Zhou, C. G.; Zheng, M. R.; Lu, J. P.; Varghese, B.; Cheng, H. S.; Sow, C. H., K-Enriched MoO3 Nanobundles: A Layered Structure with High Electric Conductivity. Journal of Physical Chemistry C 2012, 116 (6), 3962-3967.

8. Han, B.; Zhang, Q. F.; Wu, J. P.; Karwacki, E. J.; Derecskei, A.; Xiao, M. C.; Lei, X. J.; O'Neill, M. L.; Cheng, H. S., On the Mechanisms of SiO2 Thin-Film Growth by the Full Atomic Layer Deposition Process Using Bis(t-butylamino)silane on the Hydroxylated SiO2(001) Surface. Journal of Physical Chemistry C 2012, 116 (1), 947-952.

9. Du, Z. Y.; Zhou, C. G.; Gao, Y. J.; Ren, Q.; Zhang, K.; Cheng, H. S.; Wang, W.; Wang, J., Expeditious diastereoselective construction of a thiochroman skeleton via a cinchona alkaloid-derived catalyst. Organic & Biomolecular Chemistry 2012, 10 (1), 36-39.

10. Zhou, C. G.; Yao, S. J.; Zhang, Q. F.; Wu, J. P.; Yang, M.; Forrey, R. C.; Cheng, H. S., Hydrogen sequential dissociative chemisorption on Ni-n(n=2 similar to 9,13) clusters: comparison with Pt and Pd. Journal of Molecular Modeling 2011, 17 (9), 2305-2311.

11. Zhang, Q.; Han, B.; Heier, K.; Li, J. X.; Hoffman, J.; Lin, M.; Derecskei-Kovacs, A.; Cheng, H., First Principles Study of Steam Carbon Reaction on γ-Fe(111) Surface. The Journal of Physical Chemistry C 2011, 115 (24), 12068-12076.

12. Legenski, N.; Zhou, C. G.; Zhang, Q. F.; Han, B.; Wu, J. P.; Chen, L. A.; Cheng, H. S.; Forrey, R. C., Force Fields for Metallic Clusters and Nanoparticles. Journal of Computational Chemistry 2011, 32 (8), 1711-1720.

13. Ichikawa, K.; Wagatsuma, A.; Szarek, P.; Zhou, C. G.; Cheng, H. S.; Tachibana, A., Electronic stress tensor analysis of hydrogenated palladium clusters. Theoretical Chemistry Accounts 2011, 130 (2-3), 531-542.

14. Han, B.; Zhou, C. G.; Wu, J. P.; Tempel, D. J.; Cheng, H. S., Understanding CO2 Capture Mechanisms in Aqueous Monoethanolamine via First Principles Simulations. Journal of Physical Chemistry Letters 2011, 2 (6), 522-526.

15. Zhou, C. G.; Zhang, Q. F.; Chen, L.; Han, B.; Ni, G.; Wu, J. P.; Garg, D.; Cheng, H. S., Density Functional Theory Study of Water Dissociative Chemisorption on the Fe3O4(111) Surface. Journal of Physical Chemistry C 2010, 114 (49), 21405-21410.

16. Han, B.; Wu, J.; Zhou, C.; Chen, B.; Gordon, R.; Lei, X.; Roberts, D. A.; Cheng, H., First-Principles Simulations of Conditions of Enhanced Adhesion Between Copper and TaN(111) Surfaces Using a Variety of Metallic Glue Materials. Angewandte Chemie International Edition 2010, 49 (1), 148-152.

17. Chen, S.; Li, J. Y.; Zhou, C. G.; Wu, J. P.; Ternpel, D. J.; Henderson, P. B.; Brzozowski, J. R.; Cheng, H. S., Weak Chemical Complexation of PH3 with Ionic Liquids. Journal of Physical Chemistry B 2010, 114 (2), 904-909.

18. Chen, L.; Zhang, Q.; Zhang, Y.; Li, W. Z.; Han, B.; Zhou, C.; Wu, J.; Forrey, R. C.; Garg, D.; Cheng, H., A first principles study of water dissociation on small copper clusters. Physical Chemistry Chemical Physics 2010, 12 (33), 9845-9851.

19. Zhou, C. G.; Wu, J. P.; Chen, L.; Wang, Y.; Cheng, H. S.; Forrey, R. C., Force Field for Copper Clusters and Nanoparticles. Journal of Computational Chemistry 2009, 30 (14), 2255-2266.

20. Yao, S. J.; Zhou, C. G.; Han, B.; Fan, T.; Wu, J. P.; Chen, L.; Cheng, H. S., Chemisorption of small fullerenes C-n (n=28,32,36,40,44,48,60) on the Si(001)-c(2x1) surface. Physical Review B 2009, 79 (15).

21. Szarek, P.; Urakami, K.; Zhou, C. G.; Cheng, H. S.; Tachibana, A., On reversible bonding of hydrogen molecules on platinum clusters. Journal of Chemical Physics 2009, 130 (8).

22. Li, J. Y.; Wu, J. P.; Zhou, C. G.; Han, B.; Lei, X. J.; Gordon, R.; Cheng, H. S., On the Relative Stability of Cobalt- and Nickel-Based Amidinate Complexes Against beta-Migration. International Journal of Quantum Chemistry 2009, 109 (4), 756-763.

23. Li, J. Y.; Wu, J. P.; Zhou, C. G.; Han, B.; Karwacki, E. J.; Xiao, M. C.; Lei, X. J.; Cheng, H. S., On the Dissociative Chemisorption of Tris(dimethylamino)silane on Hydroxylated SiO2(001) Surface. Journal of Physical Chemistry C 2009, 113 (22), 9731-9736.

24. Chen, L. A.; Zhou, C. G.; Wu, J. P.; Cheng, H. S., Hydrogen adsorption and desorption on the Pt and Pd subnano clusters - a review. Frontiers of Physics in China 2009, 4 (3), 356-366.

25. Zhou, C. G.; Yao, S. J.; Wu, J. P.; Forrey, R. C.; Chen, L.; Tachibana, A.; Cheng, H. S., Hydrogen dissociative chemisorption and desorption on saturated subnano palladium clusters (Pd(n), n=2-9). Physical Chemistry Chemical Physics 2008, 10 (35), 5445-5451.

26. Zhou, C. G.; Li, J. Y.; Chen, S.; Wu, J. P.; Heier, K. R.; Cheng, H. S., First-principles study on water and oxygen adsorption on surfaces of indium oxide and indium tin oxide nanoparticles. Journal of Physical Chemistry C 2008, 112 (36), 14015-14020.

27. Yao, S. J.; Zhou, C. G.; Wu, J. P.; Li, J.; Han, B.; Cheng, H. S., On the electronic structures and spectroscopic properties of polyyne and its derivatives. International Journal of Quantum Chemistry 2008, 108 (9), 1565-1571.

28. Kumar, T. J. D.; Zhou, C. G.; Cheng, H. S.; Forrey, R. C.; Balakrishnan, N., Effect of Co doping on catalytic activity of small Pt clusters. Journal of Chemical Physics 2008, 128 (12).

29. Han, B.; Wu, J.; Zhou, C.; Li, J.; Lei, X.; Norman, J. A. T.; Gaffney, T. R.; Gordon, R.; Roberts, D. A.; Cheng, H., Ab Initio Molecular Dynamics Simulation on the Aggregation of a Cu Monolayer on a WN(001) Surface. The Journal of Physical Chemistry C 2008, 112 (26), 9798-9802.

30. Chen, L.; Chen, B.; Zhou, C.; Wu, J.; Forrey, R. C.; Cheng, H., Influence of CO poisoning on hydrogen chemisorption onto a Pt-6 cluster. Journal of Physical Chemistry C 2008, 112 (36), 13937-13942.

专著:

1) Zhou, C.; Cheng, H., Chapter 7 Density functional theory study of water dissociative chemisorption on metal oxide surfaces In Chemical Sensors: Simulation and Modeling Volume 1: Microstructural Characterization and Modeling of Metal Oxides Ghenadii, K., Ed. Momentum Press: New York, 2012; Vol. 1, pp 263-292.

2) Chen, L.; Yang, M.; Cheng, H., Chapter 8 First-principles studies of hydrogen spillover mechanisms on metal oxides. In Chemical Sensors: Simulation and Modeling Volume 1: Microstructural Characterization and Modeling of Metal Oxides, Ghenadii, K., Ed. Momentum Press New York, 2012; Vol. 1, pp 293-316.

专利成果

申请美国专利30余项,部分专利已为德国宝马汽车公司、美国联合技术公司、美国西北太平洋国家实验、美国气体与化学品公司等进行商业化开发。

1) Cheng H, Lei X, Spence D, Norman J, Robert D, Han B, Zhou C, Wu J. "Method for Suppressing Agglomeration and Improving Semiconductor Device Adhesiveness". Japanese Patent JP2010062555. Application Number: JP2009000188053.

2) Cheng H, Xiao M, Lal G, Gaffney T, Zhou C, Wu J."Precursor for Accumulating Silicon-Containing Film and Method For Producing and Using the Same". Japanese Patent JP2010043081. Application Number: JP2009000184479.

3) Cheng H, Lei X, Spence D, Norman J, Robert D, Han B, Zhou C, Wu J. "Materials for adhesion enhancement of copper film on diffusion barriers". European Patent Application EP2154717. Application Number: EP20090167949.

4) Cheng H, Xiao M, Lal G, Zhou C, Wu J. "Precursors for Depositing Silicon-containing Films and Methods for Making and Using Same". European Patent Application EP2154141.A3. Application Number: EP20090167403.

5) Cheng H, Lei X, Spence D, Norman J, Robert D, Han B, Zhou C, Wu J. "Materials for Adhesion Enhancement of Copper Film on Diffusion Barriers". US patent US7919409. Application Number: 12/192603.

6) Cheng H, Lei X, Spence D, Norman J, Robert D, Han B, Zhou C, Wu J. "Materials for Adhesion Enhancement of Copper Film on Diffusion Barriers". US patent application US20100038785. Application Number: 12/192603.

7) Cheng H, Xiao M, Lal G, Zhou C, Wu J. "Precursors for Depositing Silicon-containing Films and Methods for Making and Using Same". US patent application US20100041243. Application Number: 12/190125.

奖励/荣誉
获美国能源部2010年特殊贡献奖。